VBsemi Elec MDV3604URH-VB

VBsemi Elec · FETs & Power MOSFETs · MPN MDV3604URH-VB

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)47.3A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.1W
RDS(on)7.8mΩ@10V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 30V 47.3A 3.1W Surface Mount DFN5x6-8

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