VBsemi Elec MDD2601RH-VB

VBsemi Elec · FETs & Power MOSFETs · MPN MDD2601RH-VB

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Specifications

Gate Charge(Qg)103nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.525nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Pd - Power Dissipation235W
RDS(on)3mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 30V 100A 235W Surface Mount TO-252

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