VBsemi Elec MCQ4559A-TP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN MCQ4559A-TP-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)6nC@10V;8nC@10V
Output Capacitance(Coss)75pF;95pF
Current - Continuous Drain(Id)5.3A;4.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3.1W;3.4W
Reverse Transfer Capacitance (Crss@Vds)40pF;60pF
RDS(on)26mΩ@10V;55mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)665pF;650pF
TypeN-Channel + P-Channel

Technical details

60V 1V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS

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