VBsemi Elec MCH6662-VB

VBsemi Elec · FETs & Power MOSFETs · MPN MCH6662-VB

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Specifications

Gate Charge(Qg)5nC@8V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.7W
RDS(on)180mΩ@1.8V
Number2 N-Channel
TypeN-Channel

Technical details

N-Channel 20V 2.6A 2.7W Surface Mount SC-70-6

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