VBsemi Elec MCH3310-VB

VBsemi Elec · FETs & Power MOSFETs · MPN MCH3310-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)4.3nC@4.5V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)3.1A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation500mW
RDS(on)80mΩ@4.5V;100mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number1 P-Channel
Input Capacitance(Ciss)272pF
TypeP-Channel

Technical details

P-Channel 20V 3.1A 500mW Surface Mount SOT-323(SC-70)

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