VBsemi Elec LP4101LT1G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN LP4101LT1G-VB

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)155pF
RDS(on)60mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)835pF
TypeP-Channel

Technical details

P-Channel 20V 4A 2.5W Surface Mount SOT-23(TO-236)

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