VBsemi Elec K9A20DA-VB

VBsemi Elec · FETs & Power MOSFETs · MPN K9A20DA-VB

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)16nC
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation37W
RDS(on)265mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)110pF
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 200V 10A 37W Through Hole TO-220F

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