VBsemi Elec · FETs & Power MOSFETs · MPN K80S04K3L-VB
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 1.6mΩ@10V;2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9nF |
| Type | N-Channel |
N-Channel 40V 120A 3.13W Surface Mount TO-252