VBsemi Elec K2158-T2B-A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN K2158-T2B-A-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)400pC@4.5V
Output Capacitance(Coss)5pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation300mW
RDS(on)2.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)2pF
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

N-Channel 60V 250mA 300mW Surface Mount SOT-23(TO-236)

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