VBsemi Elec · FETs & Power MOSFETs · MPN JCS650C-O-C-N-B-VB
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.69nF |
N-Channel 200V 35A 3.75W Through Hole TO-220AB