VBsemi Elec · FETs & Power MOSFETs · MPN JCS10N65FT-R-F-N-B-VB
No reviews yet — be the first to review VBsemi Elec JCS10N65FT-R-F-N-B-VB.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 57nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 240pF |
| RDS(on) | 820mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
N-Channel 650V 10A Through Hole TO-220F