VBsemi Elec J330-VB

VBsemi Elec · FETs & Power MOSFETs · MPN J330-VB

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Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation41.7W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)50mΩ@10V;60mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.765nF
TypeP-Channel

Technical details

P-Channel 60V 30A 41.7W Through Hole TO-220F

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