VBsemi Elec IXTP44N10T-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IXTP44N10T-VB

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Specifications

Drain to Source Voltage100V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.35W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 100V 70A 3.35W Through Hole TO-220AB

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