VBsemi Elec · FETs & Power MOSFETs · MPN IXTH86N25T-VB
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| RDS(on) | 45mΩ@6V |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
| Type | N-Channel |
N-Channel 250V 60A 3.75W Through Hole TO-247AC