VBsemi Elec IXFX62N25-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IXFX62N25-VB

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)95nC@10V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number1 N-channel
Input Capacitance(Ciss)5nF
TypeN-Channel

Technical details

N-Channel 250V 60A 300W Through Hole TO-247AC

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