VBsemi Elec IXFH40N50Q-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IXFH40N50Q-VB

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)350nC@10V
Current - Continuous Drain(Id)40A
Output Capacitance(Coss)960pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation530W
RDS(on)80mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)8.31nF
TypeN-Channel

Technical details

N-Channel 500V 40A 530W Through Hole TO-247

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