VBsemi Elec · FETs & Power MOSFETs · MPN ISZ230N10NM6ATMA1-VB
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 50A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 11mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5nF |
| Type | N-Channel |
100V 50A 2V 136W 11mΩ@10V 1 N-channel N-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS