VBsemi Elec · FETs & Power MOSFETs · MPN ISP16DP10LMXTSA1-VB
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| Gate Charge(Qg) | 13.2nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3A |
| Output Capacitance(Coss) | 51pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 6.5W |
| RDS(on) | 230mΩ@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 819pF |
| Type | P-Channel |
P-Channel 100V 3A Surface Mount SOT-223