VBsemi Elec ISC027N10NM6ATMA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN ISC027N10NM6ATMA1-VB

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Specifications

Drain to Source Voltage100V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)135A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation8.3W
RDS(on)4mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)225pF
Input Capacitance(Ciss)7.6nF
TypeN-Channel

Technical details

N-Channel 100V 135A 8.3W Surface Mount DFN-8(5x6)

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