VBsemi Elec IRLU014PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRLU014PBF-VB

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)281pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation59.5W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)32mΩ@10V;37mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 60V 35A 59.5W Through Hole TO-251

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