VBsemi Elec IRLR3110ZPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRLR3110ZPBF-VB

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Specifications

Gate Charge(Qg)160nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)565pF
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation176W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)8.5mΩ@10V;10.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

N-Channel 100V 85A 176W Surface Mount TO-252

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