VBsemi Elec IRLB4030PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRLB4030PBF-VB

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)3.07nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)305pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.78nF
TypeN-Channel

Technical details

MOSFET N-Channel 100V 180A 250W Through Hole TO-220AB

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