VBsemi Elec IRFS23N20D-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFS23N20D-VB

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)48mΩ@10V;60mΩ@6.5V
Number1 N-channel
Input Capacitance(Ciss)2.82nF
TypeN-Channel

Technical details

N-Channel 200V 40A 200W Surface Mount TO-263(D2PAK)

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