VBsemi Elec IRFI9Z34N-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFI9Z34N-VB

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)20A
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)100mΩ@10V;120mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)550pF
TypeP-Channel

Technical details

P-Channel 60V 20A Through Hole TO-220F

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