VBsemi Elec IRFI9540GP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFI9540GP-VB

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Specifications

Gate Charge(Qg)23.2nC@10V;11.7nC@4.5V
Drain to Source Voltage100V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation38.1W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)220mΩ@10V;230mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 100V 12A 38.1W Through Hole TO-220F-3

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