VBsemi Elec · FETs & Power MOSFETs · MPN IRFB5615PBF-VB
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| RDS(on) | 33mΩ@6V |
| Input Capacitance(Ciss) | 2.5nF |
| Type | N-Channel |
N-Channel 150V 50A 3.75W Through Hole TO-220AB