VBsemi Elec IRFB5615PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFB5615PBF-VB

No reviews yet — be the first to review VBsemi Elec IRFB5615PBF-VB.

Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.75W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)33mΩ@6V
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 150V 50A 3.75W Through Hole TO-220AB

Related FETs & Power MOSFETs