VBsemi Elec IRFB4620PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFB4620PBF-VB

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)95nC@10V
Current - Continuous Drain(Id)35A
Output Capacitance(Coss)200pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
RDS(on)58mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)110pF
Input Capacitance(Ciss)2.69nF
TypeN-Channel

Technical details

N-Channel 200V 35A 300W Through Hole TO-220AB

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