VBsemi Elec IRFB4310PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRFB4310PBF-VB

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Specifications

Gate Charge(Qg)76nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)165pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10nF
TypeN-Channel

Technical details

N-Channel 100V 120A 370W Through Hole TO-220AB

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