VBsemi Elec IRF9630PBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF9630PBF-VB

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)370pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)500mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 200V 11A 125W Through Hole TO-220AB

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