VBsemi Elec IRF9530NPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF9530NPBF-VB

No reviews yet — be the first to review VBsemi Elec IRF9530NPBF-VB.

Specifications

Gate Charge(Qg)67nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)167mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.46nF
TypeP-Channel

Technical details

P-Channel 100V 18A 1.1W Through Hole TO-220AB

Related FETs & Power MOSFETs