VBsemi Elec IRF9520NSTRR-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF9520NSTRR-VB

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)67nC
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.1W
RDS(on)240mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)280pF
Input Capacitance(Ciss)2.765nF
TypeP-Channel

Technical details

P-Channel 100V 12A 2.1W Surface Mount TO-263(D2Pak)

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