VBsemi Elec IRF9333TRPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF9333TRPBF-VB

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)18mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.455nF
TypeP-Channel

Technical details

P-Channel 30V 7A 2.5W Surface Mount SO-8

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