VBsemi Elec IRF830ASTRLPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF830ASTRLPBF-VB

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage670V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)770mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF
TypeN-Channel

Technical details

N-Channel 670V 8A 167W Surface Mount TO-263(D2Pak)

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