VBsemi Elec IRF654A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF654A-VB

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Specifications

Configuration-
Gate Charge(Qg)68nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

N-Channel 250V 14A 125W Through Hole TO-220AB

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