VBsemi Elec IRF623-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF623-VB

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation42W
RDS(on)910mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)30pF
Input Capacitance(Ciss)185pF
TypeN-Channel

Technical details

N-Channel 200V 5A 42W Through Hole TO-220AB

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