VBsemi Elec IRF5801TRPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF5801TRPBF-VB

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Specifications

Gate Charge(Qg)6.2nC@4.5V
Drain to Source Voltage200V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)4A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF
TypeN-Channel

Technical details

N-Channel 200V 4A 5W Surface Mount TSOP-6

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