VBsemi Elec IRF1010EZS-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IRF1010EZS-VB

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Specifications

Gate Charge(Qg)96nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)715pF
Current - Continuous Drain(Id)150A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation220W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7nF
TypeN-Channel

Technical details

N-Channel 60V 150A 220W Surface Mount D2PAK(TO-263)

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