VBsemi Elec IPW65R075CFD7A-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPW65R075CFD7A-VB

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Specifications

Gate Charge(Qg)68nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)41A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation290W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)62mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

N-Channel 650V 41A 290W Through Hole TO-247AC

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