VBsemi Elec IPT039N15N5ATMA1-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPT039N15N5ATMA1-VB

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)246pF
Current - Continuous Drain(Id)170A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.5nF
TypeN-Channel

Technical details

N-Channel 150V 170A 370W Surface Mount TOLL-8

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