VBsemi Elec · FETs & Power MOSFETs · MPN IPT012N08N5ATMA1-VB
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 80nC |
| Output Capacitance(Coss) | 246pF |
| Current - Continuous Drain(Id) | 350A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 180W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 18nF |
| Type | N-Channel |
N-Channel 80V 350A 180W Surface Mount TOLL-8