VBsemi Elec IPT012N08N5-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPT012N08N5-VB

No reviews yet — be the first to review VBsemi Elec IPT012N08N5-VB.

Specifications

Drain to Source Voltage80V
Gate Charge(Qg)80nC@10V
Current - Continuous Drain(Id)350A
Output Capacitance(Coss)246pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation370W
Reverse Transfer Capacitance (Crss@Vds)21pF
Number1 N-channel
Input Capacitance(Ciss)15nF
TypeN-Channel

Technical details

80V 350A 4.5V 370W 1 N-channel N-Channel TOLL-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs