VBsemi Elec · FETs & Power MOSFETs · MPN IPP80P04P4L-04-VB
No reviews yet — be the first to review VBsemi Elec IPP80P04P4L-04-VB.
| Gate Charge(Qg) | 185nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Output Capacitance(Coss) | 1.51nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF |
| RDS(on) | 4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11.3nF |
| Type | P-Channel |
P-Channel 40V 110A 375W Through Hole TO-220AB