VBsemi Elec IPP80CN10NG-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPP80CN10NG-VB

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.75W
RDS(on)36mΩ@10V
TypeN-Channel

Technical details

N-Channel 100V 55A 3.75W Through Hole TO-220AB

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