VBsemi Elec · FETs & Power MOSFETs · MPN IPP80CN10NG-VB
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| Drain to Source Voltage | 100V |
|---|---|
| Current - Continuous Drain(Id) | 55A |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.75W |
| RDS(on) | 36mΩ@10V |
| Type | N-Channel |
N-Channel 100V 55A 3.75W Through Hole TO-220AB