VBsemi Elec IPP120N06S4-03-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPP120N06S4-03-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)180nC@10V
Current - Continuous Drain(Id)210A
Output Capacitance(Coss)1nF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation375W
RDS(on)3mΩ@10V;9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)750pF
Input Capacitance(Ciss)9.3nF
TypeN-Channel

Technical details

N-Channel 60V 210A 375W Through Hole TO-220AB

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