VBsemi Elec · FETs & Power MOSFETs · MPN IPP030N10N5-VB
No reviews yet — be the first to review VBsemi Elec IPP030N10N5-VB.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Current - Continuous Drain(Id) | 120A |
| Output Capacitance(Coss) | 2.025nF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 370W |
| RDS(on) | 5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10nF |
| Type | N-Channel |
100V 120A 4V 370W 5mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS