VBsemi Elec · FETs & Power MOSFETs · MPN IPG20N10S4L-22-VB
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 89nC |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 22mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 3.9nF |
| Type | N-Channel |
N-Channel 100V 36A Surface Mount DFN5x6-8