VBsemi Elec · FETs & Power MOSFETs · MPN IPF016N10NF2SATMA1-VB
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| Gate Charge(Qg) | 60nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 300W |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.2nF |
| Type | N-Channel |
N-Channel 100V 250A 300W D2PAK(TO-263-7L)