VBsemi Elec IPD70P04P4L-08-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPD70P04P4L-08-VB

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Specifications

Gate Charge(Qg)103nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)852pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)681pF
RDS(on)6.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.339nF
TypeP-Channel

Technical details

P-Channel 40V 90A 136W Surface Mount TO-252

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