VBsemi Elec IPD600N25N3 G-VB

VBsemi Elec · FETs & Power MOSFETs · MPN IPD600N25N3 G-VB

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Specifications

Drain to Source Voltage250V
Gate Charge(Qg)68nC@10V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)176mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 250V 17A 125W Surface Mount TO-252

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