VBsemi Elec · FETs & Power MOSFETs · MPN IPD50P03P4L-11-VB
No reviews yet — be the first to review VBsemi Elec IPD50P03P4L-11-VB.
| Gate Charge(Qg) | 240nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.565nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 127W |
| Reverse Transfer Capacitance (Crss@Vds) | 715pF |
| RDS(on) | 11mΩ@10V;13mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.3nF |
| Type | P-Channel |
P-Channel 30V 60A 127W Surface Mount TO-252